MOSFET (N-Channel)

Use the download button to access the LND150N3-G schematic symbol, PCB footprint, and 3D model.

Use the download button to access the LND01K1-G schematic symbol, PCB footprint, and 3D model.

Use the download button to access the DN3545N3-G schematic symbol and PCB footprint.

Automotive-grade silicon carbide Power MOSFET 1200 V, 75 mOhm typ., 33 A in an HiP247 package .

Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh™ DM6 Power MOSFET in an I²PAK package

N-channel 600 V, 68 mΩ typ., 36 A, MDmesh M6 Power MOSFET in a TO-220FP package

N-channel 30 V, 2 mOhm typ., 80 A, STripFET H6 Power MOSFET in DPAK package

Use the download button to access the SCT20N120AG schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STD12N50M2 schematic symbol and PCB footprint.

Use the download button to access the STFW8N120K5 schematic symbol, PCB footprint, and 3D model.

MOSFET N-CH 60V 22A POLARPAK

Use the download button to access the STQ2LN60K3-AP schematic symbol, PCB footprint, and 3D model.

MOSFET N-CH 600V 10A TO220AB

ndustry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100% avalanche tested  Zener-protected

Use the download button to access the STB30N80K5 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STFU28N65M2 schematic symbol, PCB footprint, and 3D model.

TO-263, D2PAK-3/2

Automotive-grade N-channel 650 V, 90 mOhm typ., 28 A MDmesh DM6 Power MOSFET in a TO-247 long leads package

N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a TO‑220 package

Automotive-grade silicon carbide Power MOSFET, 650 V, 55 mΩ typ., 45 A in an H2PAK-7 package

Use the download button to access the SCTH35N65G2V-7 schematic symbol, PCB footprint, and 3D model.

N-channel 600 V, 85 mΩ typ., 30 A MDmesh™ M6 Power MOSFET in a TO-220FP package

N-channel 950 V, 0.68 Ω typ., 10 A Zener-protected SuperMESH3™ Power MOSFET in TO-220FP, I2PAKFP, TO-220 and TO-247

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ=150 °C) N-channel in a HiP247 long leads package

Use the download button to access the SCTW35N65G2V schematic symbol, PCB footprint, and 3D model.

Automotive-grade N-channel 1200 V, 7.25 Ω typ., 1.5 A, MDmesh K5 Power MOSFET in an H²PAK-2 package

Use the download button to access the SCT20N120H schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STW10N105K5 schematic symbol, PCB footprint, and 3D model.

Use the download button to access the STL117N4LF7AG schematic symbol, PCB footprint, and 3D model.

ROHS COMPLIANT, TO-262, I2PAK-3

N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO‑247 package

Automotive-grade N-channel 40 V, 0.9 mΩ typ., 120 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package

N-channel 75 V, 0.0095 Ohm typ., 80 A STripFET(TM) II Power MOSFET in D2PAK package

N-channel 600 V, 115 mΩ typ., 25 A, MDmesh DM6 Power MOSFET in a D²PAK package

N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH Power MOSFET in an IPAK package

N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package

N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a TO-220 package

N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh™ K5 Power MOSFET in a TO-247 package

Automotive-grade N-channel 600 V, 70 mOhm typ., 36 A MDmesh DM6 Power MOSFET in an H2PAK-2 package

STMicroelectronics STP410N4F7AG is an automotive-grade N-channel power MOSFET rated 40 V, 180 A with 0.8 mΩ typical RDS(on) in STripFET F7 technology. AEC-Q101 qualified for harsh environments in a TO-220AB package. Available from stock with worldwide shipping.

N-channel 600 V, 200 mΩ typ., 15 A, MDmesh™ DM6 Power MOSFET in a TO‑220 package

N-channel 650 V, 0.067 Ohm typ., 35 A, MDmesh M5 Power MOSFET in TO-3PF package

N-channel 650 V, 0.75 Ω typ., 10 A SuperMESH3™ Power MOSFETs in D²PAK, TO-220FP, I²PAKFP and TO-220 packages

N-channel 620 V, 1.28 Ω typ., 4.2 A MDmesh™ K3 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

MOSFET PTD HIGH VOLTAGE

N-channel 600 V, 32 mΩ typ., 72 A, MDmesh™ M6 Power MOSFET in a TO247-4 package

Use the download button to access the STQ1HN60K3-AP schematic symbol, PCB footprint, and 3D model.

N-channel 100 V, 0.038 Ω typ., 25 A STripFET™ II Power MOSFET in a DPAK package

N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET in TO-220FP, I²PAKFP, IPAK

The TN0110N3-G-P002 is a single N-channel MOSFET from Microchip with 100 V drain-source breakdown voltage, 350 mA maximum drain current, and 3 Ω maximum RDS(on). It features a built-in body diode in a through-hole TO-92-3 package for ease of prototyping and low-volume production. Available in stock with worldwide shipping.